Semiconductor light emitting element and method for manufacturing semiconductor light emitting element

A semiconductor light emitting element, comprising:

• an n-type semiconductor layer including a nitride semiconductor;
• a p-type semiconductor layer including a nitride semiconductor;
• a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit including a first well layer including a nitride semiconductor;
• a first layer provided between the first well layer and the p-type semiconductor layer, the first layer including Alx1Ga1-x1-y1Iny1N (0≦x1<1, 0≦y1<1, and x1+y1≦1) having a first Mg concentration;
• a second layer provided between the first layer and the p-type semiconductor layer, the second layer including Alx2Ga1-x2-y2Iny2N (0≦x2≦x1, y1<y2<1, and x2+y2≦1) and Mg, the second layer having a second Mg concentration higher than the first Mg concentration;
• and
• a third layer provided between the second layer and the p-type semiconductor layer, the third layer including Alx3Ga1-x3-y3Iny3N (x1<x3<1, 0<y3<1, and x3+y3≦1) and Mg, the third layer having a third Mg concentration higher than the first Mg concentration and lower than the second Mg concentration.

A method for manufacturing a semiconductor light emitting element, comprising:

• forming a light emitting unit on an n-type semiconductor layer including a nitride semiconductor, the light emitting unit including a first well layer including a nitride semiconductor;
• forming a first layer on the light emitting unit, the first layer including Alx1Ga1-x1-y1Iny1N (0<x1<1, 0≦y1<1, and x1+y1≦1) having a first Mg concentration;
• forming a second layer on the first layer, the second layer including Alx2Ga1-x2-y2Iny2N (0≦x2<x1, 0≦y2<1, and x2+y2≦1) and Mg, the second layer having a second Mg concentration higher than the first Mg concentration;
• and
• forming a third layer on the second layer at a temperature higher than a formation temperature of the second layer, the third layer including Alx3Ga1-x3-y3Iny3N (x1<x3<1, 0≦y3<1, and x3+y3≦1) and Mg, third layer having a third Mg concentration higher than the first Mg concentration and lower than the second Mg concentration.

A method for manufacturing a semiconductor light emitting element, comprising:

• forming a light emitting unit on an n-type semiconductor layer including a nitride semiconductor, the light emitting unit including a first well layer including a nitride semiconductor;
• forming a first layer on the light emitting unit, the first layer including Alx1Ga1-x1-y1Iny1N (0≦x1<1, 0≦y1<1, and x1+y1≦1) having a first Mg concentration;
• forming a second layer on the first layer, the second layer including Alx2Ga1-x2-y2Iny2N (0≦x2<x1, y1<y2<1, and x2+y2≦1) and Mg, the second layer having a second Mg concentration higher than the first Mg concentration;
• and
• forming a third layer on the second layer at a temperature higher than a formation temperature of the second layer, the third layer including Alx3Ga1-x3-y3Iny3N (x1<x3<1, 0<y3<1, and x3+y3≦1) and Mg, the third layer having a third Mg concentration higher than the first Mg concentration and lower than the second Mg concentration.