SiC SINGLE CRYSTAL SUBSTRATE
AssigneeMitsui Mining & Smelting Co., Ltd.
InventorsAtsushi Koike, Yasunori Tabira, Ryuichi Sato
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Abstract
A single crystal SiC substrate capable of forming a good epitaxial thin film thereon to give a high-quality epitaxial substrate is provided. The single crystal SiC substrate has a CMP-treated surface and has 5 or fewer lattice defects measuring 30 nm or more in a direction parallel to the polished surface and 50 nm or more in a direction perpendicular to the polished surface as counted within a depth of 100 nm from the polished surface in a direction perpendicular to the polished surface and a length of 10 μm in a direction parallel to the polished surface when observed in cross-section using a transmission electron microscope under the 00L reflection or the h-h0 reflection, where L and h are each an integer other than 0.
Claims4
A single crystal SiC substrate having a CMP-treated polished surface,
- the single crystal SiC substrate having 5 or fewer lattice defects, which have a width of 30 nm or more in a direction parallel to the polished surface and a length of 50 nm or more in a direction perpendicular to the polished surface, as counted within a depth of 100 nm from the polished surface in a direction perpendicular to the polished surface and a length of 10 nm in a direction parallel to the polished surface when observed in cross-section using a transmission electron microscope under the 00L reflection or the h-h0 reflection, where L and h are each an integer other than 0.
Dependencies are inferred from the claim text.