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US 2015/0084064 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsYoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Toshiaki Iwamatsu
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Abstract
The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP1 formed on the substrate. The upper surface of the semiconductor layer EP1 is positioned higher than the upper surface of the substrate straight below the gate electrode GE. And, end parts of the gate electrode GE in a gate length direction are positioned on the semiconductor layer EP1.
Claims20
A semiconductor device comprising
- a MISFET including:
- a substrate;
- a gate electrode formed on the substrate via a gate insulating film;
- and
- a first epitaxial layer for source/drain formed on the substrate,
- wherein a first insulating film is formed on the substrate so as to cover the first epitaxial layer,
- the gate electrode is buried in a first trench formed in the first insulating film,
- the first epitaxial layer has an upper surface positioned higher than an upper surface of the substrate straight below the gate electrode, and
- end parts of the gate electrode are positioned on the first epitaxial layer in a gate length direction of the MISFET.
6 more elements
A method of manufacturing a semiconductor device having a MISFET, the method comprising the steps of:
- (a) preparing a substrate;
- (b) forming a dummy gate on the substrate;
- (c) after the step (b), forming a first epitaxial layer for source/drain on the substrate;
- (d) after the step (c), forming a first sidewall film on a sidewall of the dummy gate;
- (e) after the step (d), forming a first insulating film on the substrate so as to cover the dummy gate;
- (f) after the step (e), removing part of the first insulating film to expose an upper surface of the dummy gate;
- (g) after the step (f), removing the dummy gate and the first sidewall film to form a first trench;
- and
- (h) after the step (g), forming a gate electrode in the first trench via a gate insulating film.
6 more elements
Dependencies are inferred from the claim text.