Semiconductor device

A semiconductor device comprising:

• a first transistor;
• a second transistor;
• and
• a capacitor,
• wherein the second transistor comprises:
• a semiconductor;
• a first conductive film and a second conductive film each comprising a region in contact with a top surface and a side surface of the semiconductor;
• a first insulating film comprising a region in contact with the top surface and the side surface of the semiconductor;
• and
• a third conductive film comprising a region facing the top surface and the side surface of the semiconductor with the first insulating film therebetween, and
• wherein the capacitor comprises:
• a second insulating film which is in contact with the first conductive film and comprises an opening reaching the first conductive film;
• a fourth conductive film comprising a region in contact with a bottom surface and a side surface of the opening;
• a third insulating film comprising a region facing the bottom surface and the side surface of the opening with the fourth conductive film therebetween;
• and
• a fifth conductive film comprising a region facing the fourth conductive film with the third insulating film therebetween.

A semiconductor device comprising:

• a semiconductor;
• a first conductive film and a second conductive film each comprising a region in contact with a top surface and a side surface of the semiconductor;
• a first insulating film comprising a region in contact with the top surface and the side surface of the semiconductor;
• a third conductive film comprising a region facing the top surface and the side surface of the semiconductor with the first insulating film therebetween;
• a second insulating film in contact with the first conductive film;
• a fourth conductive film over the second insulating film;
• a third insulating film over the second insulating film;
• a fifth conductive film which is over the third insulating film and electrically connected to the first conductive film through the fourth conductive film;
• a fourth insulating film in contact with the fifth conductive film;
• and
• a sixth conductive film facing the fifth conductive film with the fourth insulating film therebetween.

A semiconductor device comprising:

• a first transistor;
• a second transistor;
• and
• a capacitor overlapping with at least part of the first transistor or the second transistor,
• wherein the second transistor comprises:
• a semiconductor;
• a first conductive film and a second conductive film each comprising a region in contact with a top surface and a side surface of the semiconductor;
• a first insulating film comprising a region in contact with the top surface and the side surface of the semiconductor;
• and
• a third conductive film comprising a region facing the top surface and the side surface of the semiconductor with the first insulating film therebetween, and
• wherein the capacitor comprises:
• a second insulating film in contact with the first conductive film;
• a fourth conductive film over the second insulating film;
• a third insulating film over the second insulating film;
• a fifth conductive film which is over the third insulating film and electrically connected to the first conductive film through the fourth conductive film;
• a fourth insulating film in contact with the fifth conductive film;
• and
• a sixth conductive film facing the fifth conductive film with the fourth insulating film therebetween.