Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Junichi KOEZUKA, Kenichi OKAZAKI, Yasuharu HOSAKA
Life of this patent
Estimating the term…
Abstract
An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.
Claims26
A semiconductor device comprising:
- a resistor comprising a metal oxide film over an insulating surface and a nitride insulating film in contact with the metal oxide film,
- wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region.
A semiconductor device comprising:
- a capacitor comprising a metal oxide film over an insulating surface, a conductive film at least partly overlapping with the metal oxide film, and a nitride insulating film between the metal oxide film and the conductive film,
- wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region.
A semiconductor device comprising:
- a capacitor comprising a nitride insulating film, a metal oxide film in contact with the nitride insulating film, a conductive film at least partly overlapping with the metal oxide film, and an insulating film between the metal oxide film and the conductive film,
- wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region.
A semiconductor device comprising:
- a gate electrode over an insulating surface;
- an oxide semiconductor film at least partly overlapping with the gate electrode;
- a gate insulating film between the gate electrode and the oxide semiconductor film;
- and
- a pair of electrodes in contact with the oxide semiconductor film,
- wherein when a region in the oxide semiconductor film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region.
Dependencies are inferred from the claim text.