US 2015/0084044 A1 · SEMICONDUCTOR DEVICE

Abstract

Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

Claims24

Dependent claims

A semiconductor device comprising:

a transistor comprising:
a first gate electrode;
a semiconductor layer comprising a channel formation region and overlapping with the first gate electrode;
a first insulating film between the first gate electrode and the semiconductor layer;
a second insulating film between the first gate electrode and the first insulating film;
and
a source electrode and a drain electrode each in contact with a side surface of the semiconductor layer,
wherein the semiconductor layer comprises indium, zinc, and oxygen,
wherein the semiconductor layer comprises:
a first semiconductor film;
a second semiconductor film over the first semiconductor film;
and
a third semiconductor film over the second semiconductor film, and
wherein the first insulating film has a higher dielectric constant than the second insulating film.

11 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims24