Semiconductor device and imaging device

A semiconductor device, comprising:

• a semiconductor layer including
• a first semiconductor portion including a first portion, a second portion separated from the first portion in a first direction, and a third portion provided between the first portion and the second portion, and
• a second semiconductor portion being continuous with the first semiconductor portion, the second semiconductor portion including a fourth portion, a fifth portion, and a sixth portion, the fourth portion being separated from the first portion in a second direction intersecting the first direction, the fifth portion being separated from the second portion in the second direction, the sixth portion being provided between the fourth portion and the fifth portion;
• a first gate electrode provided to be separated from the third portion in a third direction intersecting a plane including the first direction and the second direction;
• a second gate electrode provided to be separated from the sixth portion in the third direction and separated from the first gate electrode in the second direction;
• an insulating film provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer;
• a first electrode provided to be separated from the first gate electrode, separated from the second gate electrode, and electrically connected to the first portion;
• a second electrode provided to be separated from the first gate electrode, separated from the second gate electrode, separated from the first electrode, and electrically connected to the second portion;
• a third electrode provided to be separated from the first gate electrode, separated from the second gate electrode, separated from the first electrode, separated from the second electrode, and electrically connected to the fourth portion;
• and
• a fourth electrode provided to be separated from the first gate electrode, separated from the second gate electrode, separated from the first electrode, separated from the second electrode, separated from the third electrode, and electrically connected to the fifth portion.