Thin film transistor and method of manufacturing the same

Abstract

A thin film transistor includes: a substrate; an oxide semiconductor layer disposed on the substrate; a source electrode and a drain electrode each connected to the oxide semiconductor layer and facing each other with respect to the oxide semiconductor layer; an insulating layer disposed on the oxide semiconductor layer; and a gate electrode disposed on the insulating layer. The insulating layer includes a first layer that includes silicon oxide (SiOx), a second layer that is a hydrogen blocking layer, and a third layer that includes silicon nitride (SiNx). The first, second and third layers are sequentially stacked.

Dependencies are inferred from the claim text.