Organic semiconductor element and cmis semiconductor device including the same
AssigneeTohoku University
InventorTadahiro Ohmi
Life of this patent
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Abstract
There is provided with an organic semiconductor element. The organic semiconductor element has a source electrode portion, a drain electrode portion, an active layer region of an organic semiconductor, a gate insulating film, and a gate electrode portion. The source electrode portion has a multilayer structure where layers are arranged in order of a work function from a lowermost layer region in contact with the active layer region to an uppermost layer region. A work function of a material of the lowermost layer region is closer to a work function of a material of the active layer region than a work function of a material of the uppermost layer region. The lowermost region is made of lanthanum boride (LaB6) and contains nitrogen.
Claims15
An organic semiconductor element comprising:
- a source electrode portion;
- a drain electrode portion;
- an active layer region of an organic semiconductor;
- a gate insulating film;
- and
- a gate electrode portion, wherein
- the source electrode portion has a multilayer structure including a first layer region arranged on the active layer region contacting the active layer region, and a second layer region arranged above the first layer region so as not to contact the active layer region, and
- a work function difference between a material of the first layer region and a material of the active layer region is smaller than a work function difference between the material of the active layer region and a material of the second layer region.
2-9. (canceled)
An organic semiconductor element comprising:
- a source electrode portion;
- a drain electrode portion;
- an active layer region of an organic semiconductor comprising pentacene;
- a gate insulating film;
- a gate electrode portion;
- and
- a layer region arranged between said active layer region and the gate insulating film so as to contact said active layer region, wherein
- the source electrode portion has a multilayer structure including a first layer region arranged on the active layer region contacting the active layer region, and a second layer region arranged above the first layer region so as not to contact the active layer region,
- a work function difference between a material of the first layer region and a material of the active layer region is smaller than a work function difference between the material of the active layer region and a material of the second layer region.
An organic semiconductor element comprising:
- a source electrode portion;
- a drain electrode portion;
- an active layer region of an organic semiconductor;
- a gate insulating film;
- and
- a gate electrode portion, wherein
- the drain electrode portion has a multilayer structure including a third layer region arranged on the active layer region contacting the active layer region, and a fourth layer region arranged above the third layer region so as not to contact the active layer region,
- a work function difference between a material of the third layer region and a material of the active layer region is smaller than a work function difference between the material of the active layer region and a material of the fourth layer region, and
- the organic semiconductor exhibits a p-type operation characteristic.
Dependencies are inferred from the claim text.