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US 2015/0083998 A1Published application
Light emitting diode and method of fabrication thereof
AssigneeTSMC Solid State Lighting Ltd.
InventorsHsin-Hsien Wu, Chyi Shyuan Chern, Chun-Lin Chang, Ching-Wen Hsiao, Kuang-Huan Hsu
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Abstract
A light-emitting diode (LED) element includes a substrate and a GaN layer formed on the substrate. The GaN layer includes a boundary layer including a surface of the GaN opposing the substrate. The surface has a micro-roughening texture and a macro-roughening texture. The boundary layer includes at least one of As, Si, P, Ge, C, B, F, N, Sb, and Xe ions.
Claims20
A device, comprising:
- a substrate;
- and
- a doped III-V compound layer disposed over the substrate;
- wherein:
- the doped III-V compound layer includes an upper boundary;
- the upper boundary has a micro-roughened texture and a macro-roughened texture;
- and
- the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.
5 more elements
A device, comprising:
- a substrate;
- and
- a light-emitting diode (LED) disposed over the substrate, the LED containing a first doped III-V compound layer, a multiple quantum well (MQW) disposed over the first doped III-V compound layer, and a second doped III-V compound layer disposed over the MQW,
- wherein:
- the second doped III-V compound layer has a treated upper surface;
- the treated upper surface has a micro-roughened texture associated with first peak to valley differences and a macro-roughened texture associated with second peak to valley differences;
- and
- a portion of the second doped III-V compound layer located near the upper surface contains dopant ions that include at least one of:
- As, Si, P, Ge, C, B, F, N, Sb, and Xe ions.
6 more elements
A device, comprising:
- a substrate;
- a GaN layer formed on the substrate, wherein the GaN layer includes a boundary layer including a surface of the GaN opposing the substrate, wherein the surface has a micro-roughening texture and a macro-roughening texture, and wherein the boundary layer includes at least one of As, Si, P, Ge, C, B, F, N, Sb, and Xe ions.
Dependencies are inferred from the claim text.