Group III Nitride Semiconductor Light-Emitting Device
AssigneeToyoda Gosei Co., Ltd.
InventorsKengo NAGATA, Ryo NAKAMURA
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Abstract
The present invention provides a Group III nitride semiconductor light-emitting device having a flat semiconductor layer, in which the stress applied to the light-emitting layer is relaxed. The light-emitting layer of the light-emitting device includes a well layer and a barrier layer comprising an AlGaN layer containing In. The light-emitting device has a pit extending from an n-type semiconductor layer to layers above the light-emitting layer. A pit diameter at an interface between the light-emitting layer and the n-type semiconductor layer is 120 nm to 200 nm. The barrier layer has an In concentration of 6.0×1019 cm−3.
Claims17
A Group III nitride semiconductor light-emitting device having an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, wherein:
- the light-emitting layer comprising:
- a well layer, and
- a barrier layer comprising an AlGaN layer containing In;
- wherein the barrier layer has an In concentration not larger than 6×1019 cm3;
- wherein a pit is provided so as to extend from the n-type semiconductor layer to at least an interface between the light-emitting layer and the p-type semiconductor layer;
- and
- wherein the pit diameter is from 120 nm to 200 nm at an interface between the light-emitting layer and the n-type semiconductor layer.
Dependencies are inferred from the claim text.