Group-iii nitride semiconductor light emitting element, method of manufacturing the same and method of manufacturing mounting body

Abstract

A method of manufacturing a group-III nitride semiconductor light emitting element includes a first irregularity shape part forming process of sequentially forming an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer on an irregularity substrate to make a laminated body and forming a first irregularity shape part on the n-type semiconductor layer, a first irregularity shape part exposing process of separating the irregularity substrate from the laminated body to expose the first irregularity shape part of the n-type semiconductor layer, and a second irregularity shape part forming process of roughening a surface of the first irregularity shape part of the n-type semiconductor layer to form a second irregularity shape part having fine irregularity on the first irregularity shape part.

Dependencies are inferred from the claim text.