Plasma processing method
AssigneeTokyo Electron Limited
InventorsAkitaka SHIMIZU, Tetsuya OHISHI
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Abstract
A method includes: etching a target layer of a target object in a processing chamber by generating a plasma of a first gas containing at least one of SF6, ClF3 and F2 supplied into the processing chamber to; and forming a protective film on the target layer by generating a plasma of a second gas containing at least one of hydrocarbon, fluorocarbon, and fluorohydrocarbon supplied into the processing chamber. In the etching, a pressure in the processing chamber is set to a first pressure and a first bias power is applied to a lower electrode. In the forming, the pressure is set to a second pressure lower than the first pressure and a second bias power higher than the first bias power is applied to the lower electrode.
Claims13
A plasma processing method of processing a target object in a processing chamber by using a plasma generated between an upper electrode and a lower electrode facing the upper electrode, the method comprising:
- etching an etching target layer of the target object by supplying a first gas containing at least one of SF6, ClF3 and F2 into the processing chamber and generating a plasma of the first gas while a pressure in the processing chamber is set to a first pressure and a first bias power is applied to the lower electrode;
- and
- forming a protective film on at least a part of the etching target layer by supplying a second gas containing at least one of hydrocarbon, fluorocarbon, and fluorohydrocarbon into the processing chamber and generating a plasma of the second gas while the pressure in the processing chamber is set to a second pressure which is lower than the first pressure and a second bias power which is higher than the first bias power is applied to the lower electrode,
- wherein a cycle including the etching and the forming is repeatedly executed.
Dependencies are inferred from the claim text.