Analysis method and semiconductor etching apparatus

An analysis method of identifying a wavelength and a time of plasma light-emission data, said wavelength and said time of said plasma light-emission data being to be used for the adjustment of an etching processing condition in a semiconductor etching processing for applying said etching processing to a semiconductor wafer using said plasma,

• said analysis method, comprising:
• an acquisition step of acquiring said plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, said plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of said etching processing;
• a first evaluation step of evaluating the relationship between changes in said etching processing conditions and changes in said light-emission intensities at said plurality of different wavelengths and times with respect to said wavelengths and times of said plasma light-emission data;
• and
• an identification step of identifying said wavelength and said time of said plasma light-emission data based on the result of said first evaluation step, said wavelength and said time of said plasma light-emission data being to be used for said adjustment of said etching processing condition.