Photoelectric conversion element

A photoelectric conversion element comprising a photoelectric conversion layer laminated a first metal layer, a first semiconductor layer, a second semiconductor layer and a second metal layer;

• wherein
• a layer containing plural minute metal particles is provided on said semiconductor layers,
• each of said minute particles has a volume of 4 n 0.52 μm3 inclusive on average,
• the interval between adjacent two of said minute particles is 1 nm or more if the particle volume is less than 4×10−3 μm3, but is 100 nm to 1 μm inclusive if the particle volume is 4×10−3 μm3 or more,
• said second semiconductor layer has a smaller band gap than said first semiconductor layer,
• said second semiconductor layer has polarity opposite to that of said first semiconductor layer, and
• said second semiconductor layer is positioned within 5 nm from said minute particles.