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US 2015/0083037 A1Published application
Isoelectronic Surfactant Induced Sublattice Disordering In Optoelectronic Devices
AssigneeThe Boeing Company
InventorsChristopher M. Fetzer, James H. Ermer, Richard R. King, Peter C. Colter
Life of this patent
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Abstract
A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.
Claims27
1-37. (canceled)
A method of making a III-V optoelectronic device, comprising:
- growing a lower structure;
- introducing an isoelectronic surfactant in a molar ratio of isoelectronic surfactant to group-III precursor that is between about 1×10−5 to 0.2;
- growing a subsequent structure at a reduced pressure of 10 to less than 95 torr in the presence of the isoelectronic surfactant;
- allowing the isoelectronic surfactant to desorb;
- and
- growing said subsequent structure in the absence of the isoelectronic surfactant.
3 more elements
A method of making a III-V optoelectronic device, comprising:
- growing a lower structure;
- growing a first side and a second side of a tunnel junction;
- introducing an isoelectronic surfactant in a molar ratio of isoelectronic surfactant to group-III precursor that is between about 1×10−5 to 0.2;
- increasing a band gap associated with a top structure by growing the top structure in the presence of the isoelectronic surfactant at a pressure of 10 to less than 95 torr;
- allowing the isoelectronic surfactant to desorb;
- and
- growing a subsequent structure in the absence of the isoelectronic surfactant.
4 more elements
A method of making a solar cell having a GaInP top layer, comprising:
- growing a lower structure;
- introducing an isoelectronic surfactant selected from the group consisting of Sb, As, Bi, Tl, said surfactant being present in a ratio of surfactant to group III precursor that is at least 1×10−5;
- and
- growing a subsequent structure at a reduced pressure of 10 to less than 95 torr in the presence of the surfactant that comprises said top layer, and
- wherein said top layer comprises GaInP.
2 more elements
A method of making a solar cell having a GaInP top layer, comprising:
- growing a lower structure;
- introducing Sb as an isoelectronic surfactant in a ratio of TESb/(TMGa+TMIn) that equals about 1×10−5 to 0.1;
- and
- growing a subsequent structure at a reduced pressure of 10 to less than 95 torr in the presence of said surfactant that comprises said top layer, and
- wherein said top layer comprises GaInP.
2 more elements
Dependencies are inferred from the claim text.