Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
AssigneeInternational Business Machines Corporation
InventorsCan Bayram, Christos D. Dimitrakopoulos, Keith E. Fogel, Jeehwan Kim, John A. Ott, Devendra K. Sadana
Life of this patent
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Abstract
A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.
Claims19
A method of forming a semiconductor material comprising:
- forming a graphene layer on a semiconductor and carbon containing substrate;
- depositing a metal containing monolayer on the graphene layer;
- forming an epitaxial layer of a gallium containing material on the metal containing monolayer;
- and
- cleaving a layered stack of the metal containing monolayer and the epitaxial layer of the gallium containing material from the graphene layer that is present on the semiconductor and carbon containing substrate.
A method for forming at least one semiconductor layer comprising:
- forming at least one first epitaxial layer of at least one first gallium containing material on a graphene layer that is present on a semiconductor and carbon containing substrate;
- bonding a transfer substrate to a surface of the at least one first epitaxial layer of the at least one first gallium containing material that is opposite a surface of the at least one first epitaxial layer of the at least one first gallium containing material that present on the semiconductor and carbon containing substrate;
- applying a mechanical force to the transfer substrate in a direction away from the graphene layer to cleave the at least one first epitaxial layer of the at least one first gallium containing material from a stack of the graphene layer and the semiconductor and carbon containing substrate;
- removing the transfer substrate from the at least one first epitaxial layer of the first gallium containing material;
- bonding a device substrate to the at least one first epitaxial layer of the first gallium containing material;
- and
- forming a second epitaxial layer of a second gallium containing material on the at least one first epitaxial layer of the at least one first gallium containing material.
19-25. (canceled)
Dependencies are inferred from the claim text.