Field emission devices and methods of manufacturing emitters thereof
AssigneeKumoh National Institute of Technology - Academic Cooperation Foundation
InventorsDonggu LEE, Shanghyeun PARK, Yongchul KIM, Ilhwan KIM, Taewon JEONG
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Abstract
A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.
Claims13
A field emission device, comprising:
- an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;
- an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source;
- and
- a gate electrode around the opening;
- wherein the electron emission source comprises a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.
A field emission device, comprising:
- a body comprising a cavity and an opening allowing the cavity to communicate with an outside of the body;
- a cathode electrode in the cavity, wherein a plurality of graphene thin films are vertically toward the opening at a position in the cavity opposite the opening;
- and
- a gate electrode around the opening.
A method of manufacturing an emitter, the method comprising:
- forming a graphene thin film on a surface of a conductive film;
- forming a stack structure in which the graphene thin film and the conductive film are repeatedly stacked;
- forming a sintered structure by molding and sintering the stack structure and a conductive powder, wherein the sintered structure has a form in which the graphene thin film is in a conductor;
- and
- partially removing the conductor in a length direction of the graphene thin film.
Dependencies are inferred from the claim text.