Field emission devices and methods of manufacturing gate electrodes thereof

A field emission device, comprising:

• an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;
• an insulating spacer around the emitter;
• and
• a gate electrode, supported by the insulating spacer, comprising an electrode unit that defines an opening that is a discharge path of electrons emitted from the emitter, and a tunneling member that covers the opening and passes the electrons therethrough according to a tunneling effect.

A method of manufacturing a gate electrode, the method comprising:

• forming a graphene thin film on one surface of a conductive film;
• forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film;
• partially removing the conductive film through the etching opening to partially expose the graphene thin film;
• and
• removing the mask layer.