Hybrid mos optical modulator
AssigneeHewlett-Packard Development Company, L.P.
InventorDi Liang
Life of this patent
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Abstract
A hybrid MOS optical modulator. The optical modulator includes an optical waveguide, a cathode comprising a first material and formed in the optical waveguide, and an anode comprising a second material dissimilar from the first material and formed in the optical waveguide, the anode adjoining the cathode, a capacitor being defined between the anode and the cathode.
Claims15
A hybrid MOS optical modulator comprising:
- an optical waveguide;
- a cathode comprising a first material and formed in the optical waveguide;
- and
- an anode comprising a second material dissimilar from the first material and formed in the optical waveguide, the anode adjoining the cathode, a capacitor being defined between the anode and the cathode.
The optical modulator of claim and further comprising at least one additional electrode comprising a material dissimilar to at least one of the cathode and the anode, the third electrode formed in the optical waveguide and defining with at least one of the cathode and the anode another capacitor.
A method of fabricating an optical modulator comprising:
- forming an isolation trench in a first semiconductor layer carried by a substrate;
- implanting ions in a portion of the first semiconductor layer;
- forming a second semiconductor layer on the first semiconductor layer, the second semiconductor dissimilar from the first semiconductor, a capacitor being defined between the first and second semiconductor layers;
- forming an optical waveguide in the first and second semiconductor layers;
- removing a portion of the second semiconductor layer to expose a portion of the first semiconductor layer;
- forming an electrode on the exposed portion of the first semiconductor layer;
- and
- forming an electrode on the second semiconductor layer.
Dependencies are inferred from the claim text.