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US 2015/0054485 A1Published application
Bandgap Reference and Related Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Cheng Chou, Yue-Der Chih
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Abstract
A device includes a proportional-to-absolute-temperature (PTAT) current source having a bandgap reference voltage node, and a negative temperature dynamic load having an input terminal electrically connected to the bandgap reference voltage node.
Claims16
A device comprising:
- a proportional-to-absolute-temperature (PTAT) current source having a bandgap reference voltage node;
- and
- a negative temperature dynamic load having an input terminal electrically connected to the bandgap reference voltage node.
A method comprising:
- (a) operating N-type transistors of a bandgap circuit in a subthreshold region;
- (b) generating proportional-to-absolute-temperature (PTAT) current in the bandgap circuit;
- (c) mirroring the PTAT current to a negative temperature dynamic load;
- and
- (d) generating a bandgap reference voltage in the negative temperature dynamic load.
2 more elements
Dependencies are inferred from the claim text.