Etch Rate Modeling and Use Thereof with Multiple Parameters for In-Chamber and Chamber-to-Chamber Matching

A method for performing in-chamber matching of etch rates based on a model etch rate, the method comprising:

• receiving a voltage and current measured at a first time at an output of a radio frequency (RF) generator of a plasma system;
• calculating a first model etch rate based on the voltage, the current, and a power, the power calculated based on a phase between the voltage and the current;
• receiving a voltage and a current measured at a second time at the output of the RF generator;
• calculating a second model etch rate based on the voltage, the current, and a power, the power calculated based on a phase between the voltage and the current measured at the second time;
• comparing the first model etch rate with the second model etch rate;
• and
• adjusting power at the output of the RF generator to achieve the first model etch rate upon determining that the second model etch rate does not match the first model etch rate,
• wherein the method is executed by a processor.

A first plasma system comprising:

• a radio frequency (RF) generator for generating an RF signal, the RF generator including an output for facilitating transfer of the RF signal;
• a complex impedance sensor coupled to the output for measuring a voltage and current of the RF signal;
• an impedance matching circuit coupled to the RF generator via a cable and coupled to the plasma chamber via an RF transmission line for modifying the RF signal to generate a modified RF signal;
• a plasma chamber for generating plasma when the modified RF signal is received from the impedance matching circuit;
• a processor coupled to the complex impedance sensor for:
• receiving the voltage and current measured at the output of the RF generator;
• calculating a first model etch rate based on the voltage and current, and a power, the power calculated based on the voltage and current and a phase between the voltage and current;
• receiving a voltage and current measured at an output of an RF generator of a second plasma system;
• determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system;
• comparing the second model etch rate with the first model etch rate;
• and
• adjusting a power at the output of the RF generator of the first plasma system to achieve the first model etch rate upon determining that the second model etch rate does not match the first model etch rate.