Method for manufacturing semiconductor wafers

Abstract

The invention relates to a method for manufacturing a semiconductor wafer including a conductive via extending from a main surface of the wafer, said the via having a shape factor greater than five, the wafer including a dielectric layer, the method including: producing, by means of deep etching, at least one recess in the semiconductor wafer, the recess extending from the main surface of the wafer and having a shape factor greater than five, the recess including a side surface; forming at least one dielectric layer in the recess, including two treatments in a controlled-pressure reactor, one of said the treatments including the chemical vapor deposition, at sub-atmospheric pressure, of a dielectric onto the side surface of the recess, the chemical deposition being carried out at a temperature lower than 400° C. and at a pressure greater than 100 Torr in the reactor, and another of the treatments including the plasma-enhanced chemical vapor deposition of a dielectric onto the side surface of the recess, the chemical deposition being carried out at a pressure of less than 20 Torr in the reactor; and filling the recess with a conductive material, thus forming a via.

Dependencies are inferred from the claim text.