Trench patterning with block first sidewall image transfer
AssigneeInternational Business Machines Corporation
InventorsSivananda K. Kanakasabapathy, Chiahsun Tseng, Yongan Xu, Yunpeng Yin
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Abstract
A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure.
Claims17
A method comprising:
- forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask comprising a second hardmask layer above a first hardmask layer;
- removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask;
- forming a set of sidewall spacers above the tetra-layer hardmask defining a device pattern;
- and
- transferring a portion of the device pattern into the substrate within the pattern region of the structure.
A method comprising:
- forming a tetra-layer hardmask comprising a second hardmask layer above a first hardmask layer;
- defining a pattern region in the second hardmask layer;
- forming a device pattern above the tetra-layer hardmask;
- and
- transferring the device pattern into a substrate below the tetra-layer hardmask, wherein the device pattern is transferred into the substrate only in the pattern region defined by the second hardmask layer.
A method comprising:
- forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask comprising a first patterning layer, a first hardmask layer, a second patterning layer, and a second hardmask layer all of which are formed one top of one another and in sequence;
- forming a block pattern from a first photo-resist material above the tetra-layer hardmask;
- transferring the block pattern from the first photo-resist material into the second hardmask layer, wherein the block pattern in the second hardmask layer defines a pattern region;
- forming a device pattern using a set of sidewall spacers above the second hardmask layer;
- transferring the device pattern into the first hardmask layer, only within the pattern region;
- and
- transferring the device pattern into the substrate, only within the pattern region.
Dependencies are inferred from the claim text.