Integrated Circuits with Non-Volatile Memory and Methods for Manufacture
AssigneeSpansion LLC
InventorsKuo Tung Chang, Chun Chen, Shenqing Fang
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Abstract
Semiconductor devices and the manufacture of such semiconductor devices are described. According to various aspects of the disclosure, a semiconductor device can include a memory region, a first logic region, and a second logic region. A select gate can be formed in the memory region of the device and a first logic gate formed in the logic region. A charge trapping dielectric can then be disposed and removed from a second logic region. A gate conductor layer can then be disposed on the device and etched to define a memory gate on the sidewall of the select gate and a second logic gate in the second logic region.
Claims14
A method of manufacturing a semiconductor device that includes a first region, a second region, and a third region, comprising:
- forming a select gate in the first region;
- forming a first logic gate in the second region;
- disposing a charge trapping dielectric;
- removing the charge trapping dielectric from the third region;
- disposing a gate conductor layer;
- and
- etching the gate conductor layer to define a memory gate on a sidewall of the select gate and a second logic gate in the third region.
Dependencies are inferred from the claim text.