METHOD OF ADJUSTING A TRANSISTOR GATE FLAT BAND VOLTAGE WITH ADDITION OF Al203 ON NITRIDED SILICON CHANNEL
AssigneeApplied Materials, Inc.
InventorsTatsuya SATO, Steven C. H. HUNG, Eran NEWMAN
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Abstract
Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate. In another embodiment, the method further includes depositing an aluminum oxide layer over the substrate prior to depositing the hafnium oxide layer, and then annealing the substrate.
Claims17
A method of forming a gate stack, sequentially comprising:
- cleaning a surface of a substrate;
- annealing the substrate in an atmosphere comprising ammonia;
- hydroxylating the surface of the substrate in an atmosphere comprising water and ammonia;
- and
- depositing a hafnium oxide layer on the surface of the substrate.
A method of forming a gate stack, sequentially comprising:
- cleaning a surface of a substrate;
- annealing the substrate in an atmosphere comprising ammonia;
- hydroxylating the surface of the substrate in an atmosphere comprising water and ammonia;
- depositing an aluminum oxide layer on the surface of the substrate;
- depositing a hafnium oxide layer on the aluminum oxide layer, and
- annealing the substrate having the aluminum oxide layer and the hafnium oxide layer thereon.
A method of forming a gate stack, sequentially comprising:
- cleaning a surface of a substrate, wherein cleaning the substrate comprises exposing the substrate to ionized NF3 and NH3;
- annealing the substrate in an atmosphere comprising ammonia;
- hydroxylating the surface of the substrate in an atmosphere comprising water and ammonia, wherein a relative humidity is between about 45 percent and about 90 percent during the hydroxylating the surface;
- depositing an aluminum oxide layer on the surface of the substrate;
- and
- depositing a hafnium oxide layer on the aluminum oxide layer, wherein the hafnium oxide layer is formed during an atomic layer deposition process by reacting a hafnium precursor and an oxidizing agent.
Dependencies are inferred from the claim text.