Semiconductor substrate suitable for the realization of electronic and/or optoelectronic devices and relative manufacturing process

A manufacturing process of a semiconductive substrate hetero-growing a semiconductive material that has a different lattice constant from that of a single crystal silicon for realizing electronic and/or optoelectronic devices which comprise said semiconductive substrate, the method comprising the steps of:

• forming a single crystal silicon substrate;
• epitaxially growing a layer of single crystal silicon above said single crystal silicon substrate;
• realizing a functional coupling layer above said single crystal silicon substrate, wherein said step of realizing a functional coupling layer comprises a step of defining a plurality of microstructures shaped like inverse pyramids having a tip in said layer of single crystal silicon;
• and
• epitaxially growing a surface layer above the structure obtained with the above sequence of steps;
• wherein said step of realizing a functional coupling layer comprises a step of realizing a corrugated portion of said semiconductive substrate, said corrugated portion having the function of a functional coupling layer and wherein said step of realizing said corrugated portion comprises a step of defining a plurality of microstructures in said layer of single crystal silicon wherein said definition step realizes said plurality of microstructures shaped like an inverse pyramid, the inverse pyramids being formed closely adjacent to one another.