Method of fabricating semiconductor device having dielectric layer with improved electrical characteristics
OwnerYoun-soo KIM, Jae-hyoung CHOI +4inventors
InventorsYoun-soo KIM, Jae-hyoung CHOI, Kyu-ho CHO, Wan-don KIM, Jae-soon LIM, Sang-yeol KANG
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Abstract
A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.
Claims20
1-17. (canceled)
A method of fabricating a semiconductor device, the method comprising:
- forming a lower metal layer on a semiconductor substrate;
- forming an insertion material layer on the lower metal layer, the insertion material layer being substantially oxygen-free as deposited;
- forming a dielectric layer on the insertion material layer;
- and
- forming an upper metal layer on the dielectric layer,
- wherein the insertion material layer is converted to an insertion layer including a metal oxide, a metal nitride, or a metal oxynitride during the forming of the dielectric layer.
A method of fabricating a semiconductor device, the method comprising:
- forming a lower metal layer on a semiconductor substrate;
- forming a dielectric layer on the lower metal layer;
- forming an insertion material layer on the dielectric layer, the insertion material layer being substantially oxygen-free as deposited;
- and
- forming an upper metal layer on the insertion material layer,
- wherein the insertion material layer is converted to an insertion layer including a metal oxide, a metal oxynitride, or a metal nitride during the forming of the upper metal layer.
Dependencies are inferred from the claim text.