Methods of fabricating semiconductor devices and semiconductor devices fabricated thereby
AssigneeSK hynix Inc.
InventorsKeun Do BAN, Jung Gun HEO, Cheol Kyu BOK, Myoung Soo KIM
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Abstract
The method includes forming an array of first separation walls on an underlying layer. A block co-polymer (BCP) layer is formed to fill inside regions of the first separation walls and gaps between the first separation walls. The BCP layer is phase-separated to include first domains that provide second separation walls covering inner sidewalls and outer sidewalls of the first separation walls and second domains that are separated from each other by the first domains.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming an array of pillars over an underlying layer;
- forming a separation wall layer over the pillars and the underlying layer;
- forming a block co-polymer (BCP) layer over the separation wall layer to fill gaps between the pillars;
- and
- phase-separating the BCP layer into first and second domains,
- wherein the first domains include second separation walls formed over sidewalls of the first separation wall layer, and
- wherein the second domains are separated from the pillars by the first domains.
A method of fabricating a semiconductor device, the method comprising:
- forming an array of pillars over an underlying layer;
- forming first separation walls over sidewalls of the pillars;
- forming a block co-polymer (BCP) layer filling gaps between the pillars;
- and
- phase-separating the BCP layer into first and second domains,
- wherein the first domains include second separation walls formed over the first separation walls, and
- wherein the second domains are separated from the pillars by the first domains.
A method of fabricating a semiconductor device, the method comprising:
- forming an array of first separation walls over an underlying layer, each of the first separation walls having a hollow cylindrical shape;
- forming a block co-polymer (BCP) layer filling inside regions of the first separation walls and gaps between the first separation walls;
- and
- phase-separating the BCP layer into first and second domains,
- wherein the first domains includes second separation walls formed over inner sidewalls and outer sidewalls of the first separation walls, and
- wherein the second domains are separated from each other by the first domains.
Dependencies are inferred from the claim text.