Method of manufacturing a fin-like field effect transistor (finfet) device

A method of fabricating a semiconductor device, comprising:

• forming a fin structure of semiconductor material over a semiconductor substrate;
• providing a first gate structure disposed over and traversing a first portion of the fin structure;
• forming spacer element abutting the first gate structure;
• performing a first etching of the fin structure to provide a trench having a first profile in the fin structure adjacent the first portion;
• after the first etching, removing the spacer element, and performing a second etching of the trench to provide a second profile, wherein the second etching increases the width of the trench at an upper region of the trench.

A method of fabricating a fin-type field effect transistor (finFET) device, comprising:

• forming a fin structure over a semiconductor substrate;
• forming a gate structure of a channel region of the fin structure;
• forming a seal spacer on one sidewall of the gate structure;
• forming a dummy spacer adjacent the seal spacer;
• etching a trench having a first width and a first depth in the fin structure adjacent the gate structure, wherein a sidewall of the trench is collinear with an outer edge of the dummy spacer;
• after etching the trench, removing the dummy spacer;
• and
• after removing the dummy spacer, increasing a width of the trench such the trench having an increased width has an outer edge collinear with the seal spacer.