Methods for forming conductive elements and vias on substrates and for forming multi-chip modules
AssigneeMicron Technology, Inc.
InventorRickie C. Lake
Life of this patent
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Abstract
Methods of forming conductive elements on and in a substrate include forming a layer of conductive material over a surface of a substrate prior to forming a plurality of vias through the substrate from an opposing surface of the substrate to the layer of conductive material. In some embodiments, a temporary carrier may be secured to the layer of conductive material on a side thereof opposite the substrate prior to forming the vias. Structures, including workpieces formed using such methods, are also disclosed.
Claims20
A method for forming conductive elements on and in a substrate, the method comprising:
- at least substantially entirely covering a first major surface of a substrate with a conductive material;
- and
- subsequently forming a via through the substrate from a second major surface of the substrate opposing the first major surface to the conductive material.
A method of forming a multi-chip module, the method comprising:
- forming a first conductive via in a first semiconductor device, comprising:
- at least substantially entirely covering a first major surface of the first semiconductor device with a first conductive material;
- subsequently forming a first via through the first semiconductor device from a second major surface of the first semiconductor device opposing the first major surface of the first semiconductor device to the first conductive material;
- and
- forming a second conductive material in the first via to form the first conductive via;
- forming a second conductive via in a second semiconductor device, comprising:
- at least substantially entirely covering a first major surface of the second semiconductor device with a third conductive material;
- subsequently forming a second via through the first semiconductor device from a second major surface of the second semiconductor device opposing the first major surface of the second semiconductor device to the third conductive material;
- and
- forming a fourth conductive material in the second via to form the second conductive via;
- and
- electrically coupling the first conductive via to the second conductive via.
Dependencies are inferred from the claim text.