Method for producing a radiation-emitting semiconductor component
AssigneeOSRAM Opto Semiconductors GmbH
InventorsJoachim Hertkorn, Lorenzo Zini
Life of this patent
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Abstract
A method for producing a radiation-emitting semiconductor component is provided, comprising the following steps:—providing a growth substrate (1)—depositing a nucleation layer (2) on the growth substrate (1),—applying a structured dielectric layer (3) to the nucleation layer (2),—applying an epitaxial layer (4) by means of a FACELO process to the structured dielectric layer (3),—epitaxial growth of an epitaxial layer sequence (5) on the epitaxial layer (4), wherein the epitaxial layer sequence (5) comprises an active zone (6) that is suitable for producing electromagnetic radiation.
Claims17
A method for producing a radiation-emitting semiconductor component comprising the following steps:
- providing a growth substrate,
- depositing a nucleation layer on the growth substrate,
- applying a structured dielectric layer to the nucleation layer,
- applying an epitaxial layer on the structured dielectric layer by means of a FACELO method,
- epitaxially growing an epitaxial layer sequence onto the epitaxial layer, wherein the epitaxial layer sequence comprises an active zone suitable for generating electromagnetic radiation.
A method for producing a radiation-emitting semiconductor component comprising the following steps:
- providing a growth substrate,
- depositing a nucleation layer on the growth substrate,
- applying a structured dielectric layer to the nucleation layer,
- applying an epitaxial layer on the structured dielectric layer by means of a FACELO method,
- epitaxially growing an epitaxial layer sequence onto the epitaxial layer, wherein
- the epitaxial layer sequence comprises an active zone suitable for generating electromagnetic radiation, and
- the structured dielectric layer serves as a hard mask in an etching process.
Dependencies are inferred from the claim text.