Resist top coat composition and patterning process
AssigneesShin-Etsu Chemical Co., Ltd., Samsung Electronics Co., Ltd.
InventorsJun HATAKEYAMA, Hyun-Woo KIM
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Abstract
A resist top coat composition includes a polymer including a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group and a repeating unit q of acenaphthylene having chemical formula 1. R is hydrogen, hydroxyl. R1 is hydrogen, hydroxyl, linear or branched C1-C10-alkyl, cycloalkyl, acyloxy, alkoxycarbonyl, carboxyl, —OC(═O)R2. R2 is linear or branched C1-C10-alkyl, cycloalkyl or fluorinated alkyl. m is 1 or 2. p and q are positive numbers satisfying the expressions 0<p<1.0 and 0<q<1.0, and 0<p+q≦1.0.
Claims20
A resist top coat composition, comprising:
- a polymer including a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group and a repeating unit q of acenaphthylene having chemical formula 1:
- wherein:
- R is hydrogen, hydroxyl;
- R1 is hydrogen, hydroxyl, linear or branched C1-C10-alkyl, cycloalkyl, acyloxy, alkoxycarbonyl, carboxyl, or —OC(═O)R2, wherein R2 is linear or branched C1-C10-alkyl, cycloalkyl, or fluorinated alkyl;
- m is an integer, wherein the integer is 1 or 2;
- and
- wherein p and q are positive numbers having the expressions 0<p<1.0 and 0<q<1.0, and 0<p+q≦1.0.
A method of patterning a photoresist film, comprising:
- forming a photoresist film on a substrate;
- forming a resist top coat on the photoresist film by depositing a resist top coat composition on the photoresist film, wherein the resist top coat composition comprises a polymer including a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group and a repeating unit q of acenaphthylene having chemical formula 1:
- wherein:
- R is hydrogen, hydroxyl:
- R1 is hydrogen, hydroxyl, linear or branched C1-C10-alkyl, cycloalkyl, acyloxy, alkoxycarbonyl, carboxyl, or —OC(═O)R2, wherein R2 is linear or branched C1-C10-alkyl, cycloalkyl, or fluorinated alkyl;
- m is an integer, wherein the integer is 1 or 2;
- and
- wherein p and q are positive numbers having the expressions 0<p<1.0 and 0<q<1.0, and 0<p+q≦1.0;
- and
- patterning the photoresist film using the resist top coat.
Dependencies are inferred from the claim text.