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US 2015/0030298 A1Published application
Photonic via waveguide for pixel arrays
AssigneeQuantum Semiconductor LLC
InventorCarlos J.R.P. Augusto
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AssigneeQuantum Semiconductor LLC
InventorCarlos J.R.P. Augusto
Estimating the term…
Light guiding structures are provided to improve the light coupling between photonic active devices and the top of a metallization layer stack interconnecting these photonic active devices. Each light guiding structure comprises a hole extending between the near surface of the photonic active devices and the top surface of the metallization layer stack, said hole being filled with dielectrics or a combination of dielectrics and metals. Such a light guiding structure removes from the optical path of light rays, the interfaces between the metallization layers, thereby confining light laterally and enabling interconnects with increased thickness and more levels of metal. This results in the suppression of multiple reflections and optical crosstalk. The light guiding structures can have cross-section diagonals with sub-wavelength dimensions can be fabricated after all CMOS process steps, thus having minimal interference and maximal compatibility with CMOS processing.
(canceled)
Photonic passive structure to couple and guide light between photonic active devices, light emitting devices and light-valves, monolithically integrated with CMOS devices, which may be arranged into 2D arrays, and the top of the CMOS metallization layer stack interconnecting said photonic devices and CMOS devices, wherein said photonic passive structure comprises a hole between the near surface of said photonic active devices and the top of said CMOS metallization stack, said hole being filled with a dielectric and having inner surfaces covered with a metal film, in which the dielectric filling the hole has an index of refraction larger than the index of refraction of the inter-metal dielectrics in the metallization stack.
3-5. (canceled)
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The method of fabrication of claim 27 in which said embedded films are formed as embedded side walls to said dielectric filled holes.
The method of fabrication of claim 27 in which said embedded films are formed as embedded center columns in said dielectric filled holes.
The method of fabrication of claim 27 in which said embedded films are formed as embedded side walls to said dielectric filled holes and also as embedded center columns in said dielectric filled holes.
The method of fabrication of claim 27 in which said embedded films are formed as embedded side walls to said dielectric filled holes, and in which a portion said embedded metallic film is formed over a planar region surrounding the dielectric filled holes, and in which said portion of said metal films is perforated according to pre-defined patterns.
The method of fabrication of claim 27 in which said embedded films are formed as embedded center columns in said dielectric filled holes, and in which a portion said embedded metallic film is formed over a planar region surrounding the dielectric filled hole, and in which said portion of said metal films is perforated according to pre-defined patterns.
The method of fabrication of claim 27 in which said embedded films are formed as embedded side walls to said dielectric filled holes and also as embedded center columns in said dielectric filled holes, and in which a portion of each said embedded metallic films is formed over a planar region surrounding the dielectric filled hole, each said metal film being separated from the other by a dielectric layer, and in which said portions of said metal films are perforated according to pre-defined patterns.
(canceled)
22-26. (canceled)
Dependencies are inferred from the claim text.