Memory device and method for putting a memory cell into a state with a reduced leakage current consumption
AssigneeInfineon Technologies AG
InventorPeter HUBER
Life of this patent
Estimating the term…
Abstract
In various embodiments, a memory device includes at least one memory cell and at least one virtual supply line coupled to the at least one memory cell. The memory device is designed in such a way that a voltage potential present on the virtual supply line is altered after an active access to the memory cell by virtue of a charge stored within the memory device during the active access being re-stored in such a way that a state of the memory cell with a reduced leakage current consumption is achieved.
Claims21
A method for putting a memory cell into a state with a reduced leakage current consumption, comprising:
- starting an active access to the memory cell;
- storing a charge within a memory device, wherein the memory device comprises the memory cell;
- ending the active access to the memory cell;
- re-storing the charge;
- and
- altering a voltage potential present on a virtual supply line, wherein the virtual supply line is coupled to the memory cell.
A memory device, comprising:
- at least one memory cell and at least one virtual supply line coupled to the at least one memory cell;
- wherein the memory device is designed in such a way that a voltage potential present on the virtual supply line is altered after an active access to the memory cell by virtue of a charge stored within the memory device during the active access being re-stored in such a way that a state of the memory cell with a reduced leakage current consumption is achieved.
Dependencies are inferred from the claim text.