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US 2015/0029805 A1Published application
Semiconductor memory device
AssigneeSK hynix Inc.
InventorsSeon Kwang JEON, Sung Soo RYU, Chang il KIM
Life of this patent
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Abstract
A semiconductor memory device includes a plurality of first regions formed in a line-type and extending in a first direction, and a plurality of second regions and a plurality of third regions arranged between adjacent first regions in a zigzag manner.
Claims11
A semiconductor memory device comprising:
- a plurality of first regions formed in a line shape and extending in a first direction;
- and
- a plurality of second regions and a plurality of third regions arranged to form a zigzag pattern between adjacent first regions.
A semiconductor memory device comprising:
- a plurality of first power regions defining in a first line shape and extending in a first direction;
- a plurality of second power regions defining in a second line shape and extending in the first direction spaced apart from the first power regions;
- a plurality of drive regions defining a zigzag pattern between the first and second power regions,
- wherein the power regions are configured to supply a power-supply voltage and the drive regions are configured to receive the power-supply voltage from the power regions.
1 more element
Dependencies are inferred from the claim text.