Back to results
US 2015/0029792 A1Published application
Semiconductor memory device and method of operating the same
AssigneeSK hynix Inc.
InventorYoo Nam JEON
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device and a method of operating the same are provided. When threshold voltages of memory cells are boosted to use the memory cells as a selection transistor, a threshold voltage of an outermost memory cell may be boosted to the highest level so that a leakage current can be reduced and a channel boosting level can be increased to reduce the influence of program disturbance.
Claims20
A cell string comprising:
- first memory cells configured to store data;
- and
- second memory cells configured to be programmed and operate as a connection circuit between the first memory cells and an internal line,
- wherein control gates of the second memory cells are integrally connected.
1 more element
A semiconductor memory device comprising:
- a cell string including first memory cells configured to store data and second memory cells configured to be programmed and operate as a connection circuit between the first memory cells and an internal line, control gates of the second memory cells being integrally connected;
- and
- a peripheral circuit configured to program the second memory cells such that one of the second memory cells, which is disposed at a farthest distance from the first memory cells, has a highest threshold voltage.
A method of operating a semiconductor memory device, the method comprising:
- providing a cell string including first memory cells configured to store data and second memory cells configured to be programmed and operate as a connection circuit between the first memory cells and an internal line, control gates of the second memory cells being integrally connected;
- programming the second memory cells such that one of the second memory cells, which is disposed at a farthest distance from the first memory cells, has a highest threshold voltage;
- and
- programming a selected memory cell of the first memory cells.
1 more element
Dependencies are inferred from the claim text.