Non-Volatile Resistance-Switching Thin Film Devices
AssigneeThe Trustees of the University of Pennsylvania
InventorsI-Wei Chen, Xiang Yang
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Abstract
Disclosed herein are resistive switching devices having, e.g., an amorphous layer comprised of an insulating aluminum-based or silicon-based material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating aluminum-based or an silicon-based material and a conducting material. Also disclosed herein are methods for switching the resistance of an amorphous material.
Claims45
A resistive device, comprising:
- at least one amorphous layer, each amorphous layer comprising:
- a composition comprising:
- an electrically insulating aluminum-containing composition;
- and
- an electrically conducting composition, the electrically conducting composition comprising from about 1 percent to about 40 percent by molar percentage of the amorphous layer;
- and
- at least two electrodes in electrical contact with the amorphous layer.
A method for switching a resistive device, comprising:
- providing at least one amorphous layer, wherein each amorphous layer comprises;
- a composition comprising:
- an electrically insulating aluminum-containing composition;
- an electrically conducting composition, the electrically conducting composition comprising from about 1 percent to about 40 percent by molar percentage of the amorphous layer;
- and
- at least two electrodes in electrical contact with the amorphous layer, and
- providing a first current or voltage via the electrodes to the amorphous layer.
A resistive device comprising:
- at least one amorphous layer, the amorphous layer comprising:
- a composition comprising:
- an electrically insulating silicon-containing composition;
- and
- an electrically conducting composition comprising a metal M, wherein M comprises one or more of Ti, Zr, Hf, V, Ta, Cr, Mo, Mn, Tc, Fe, Co, Zn, Ga, In, Cd, Hg, Tl, Sn, Pb, Sb, Bi, Be, Mg, Ca, Sr, Ba, Li, Na, K, Rb, or Cs, or any combination thereof, and the electrically conducting composition comprising from about 1 percent to about 40 percent by molar percentage of the amorphous layer, and
- at least two electrodes in electrical contact with the amorphous layer.
A method for switching a resistive device, comprising:
- providing at least one amorphous layer, wherein each amorphous layer comprises:
- an electrically conducting composition comprising:
- an electrically insulating silicon containing composition;
- a metal M, wherein M comprises Ti, Zr, Hf, V, Ta, Cr, Mo, Mn, Tc, Fe, Co, Zn, Ga, In, Cd, Hg, Tl, Sn, Pb, Sb, Bi, Be, Mg, Ca, Sr, Ba, Li, Na, K, Rb, or Cs, or any combination thereof, and the electrically conducting composition comprising from about 1 percent to about 40 percent by molar percentage of the amorphous layer;
- and
- at least two electrodes in electrical contact with the amorphous layer, and
- providing a first current or voltage via the electrodes to the amorphous layer.
A resistive device comprising:
- at least one amorphous resistance-switching layers that comprises
- (a) an electrically insulating composition;
- and
- (b) an electrically conducting composition,
- wherein from about 1 percent to about 40 percent by molar percentage of the amorphous resistance-switching layer comprises the electrically conducting composition;
- and
- at least two electrodes capable of electrical contact with the amorphous resistance-switching layer.
A method, comprising:
- contacting an electrically insulating composition with an electrically conducting composition so as to form an admixture wherein from about 1 percent to about 40 percent by molar percentage of the admixture comprises the electrically conducting composition.
Dependencies are inferred from the claim text.