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AssigneeShanghai Huali Microelectronics Corporation
InventorsEnjing Cai, Qiang Li, Wen Wei
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The present invention provides a method of detecting the transistor mismatch in a SRAM cell. The SRAM cell comprises two pass-gate transistors and a bi-stable circuit including two pull up transistors and two pull down transistors. The method comprises: providing two measuring transistors, whose gates are connected to a second word line, sources are connected to the outputs of the bi-stable circuit respectively and drains are connected to two measuring terminals respectively; turning on the measuring transistors and turning off the pass-gate transistors; detecting the voltage-current curve of the two pull down transistors and the two pull up transistors through the measuring transistors at the measuring terminals so as to detect the transistor mismatch in the SRAM cell.
A method of detecting the transistor mismatch in a SRAM cell, wherein the SRAM cell comprises a first and a second pass-gate transistors (PG1, PG2), and a bi-stable circuit which includes a first and a second pull up transistors (PU1, PU2) and a first and a second pull down transistors (PD1, PD2);wherein, the gate electrodes of the first and the second pass-gate transistors are connected to a first word line (WLA), the source electrodes thereof are connected to the outputs of the bi-stable circuit respectively, and the drain electrodes thereof are connected to a first and a second bit line (BL, BL) respectively;
Dependencies are inferred from the claim text.