Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsMin-Suk Lee, Chang-Hyup Shin
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Abstract
This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a lower electrode, a variable resistance element over the lower electrode, an upper electrode disposed over the variable resistance element and including metal, and a metal compound layer configured to surround a side of the upper electrode. The metal compound layer includes a compound of the metal of the upper electrode.
Claims17
An electronic device comprising semiconductor memory, wherein the semiconductor memory comprises:
- a lower electrode;
- a variable resistance element over the lower electrode;
- an upper electrode over the variable resistance element and including a metal;
- and
- a metal compound layer formed over the variable resistance element and configured to surround a side of the upper electrode,
- wherein the metal compound layer comprises a compound of the metal of the upper electrode.
An electronic device comprising a semiconductor memory, wherein the semiconductor memory includes:
- a lower electrode;
- a magnetic resistance element formed over the lower electrode;
- an upper electrode formed of a metal over the magnetic resistance element;
- and
- a metal compound layer exhibiting a low etch rate and surrounding the upper electrode, the metal compound layer located above the magnetic resistance element to have an external side surface aligned with an external side of the magnetic resistance element.
Dependencies are inferred from the claim text.