Semiconductor Device Including a Control Circuit
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Wolfgang Scholz
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Abstract
A semiconductor device includes a semiconductor portion with a main FET and a control circuit. The main FET includes a gate electrode to control a current flow through a body zone between a source zone and a drift zone. The control circuit receives a local drift zone potential of the main FET cell and outputs an output signal indicating when the local drift zone potential exceeds a preset threshold. The control circuit may turn down or switch off the main FET and/or may output an overcurrent indication signal when the local drift zone potential exceeds the preset threshold.
Claims20
A semiconductor device comprising:
- a main FET comprising a gate electrode configured to control a current flow between a source zone and a drift zone through a body zone in a semiconductor portion;
- and
- a control circuit configured to receive a local drift zone potential of the main FET cell and to output an output signal indicating when the local drift zone potential exceeds a preset threshold.
Dependencies are inferred from the claim text.