Electrostatic discharge protection
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Ti SU, Wun-Jie LIN, Tsung-Che TSAI, Jen-Chou TSENG
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Abstract
A semiconductor device is disclosed that includes a first well of a first conductivity type, a second well of a second conductivity type, a plurality of first regions, a second region and a plurality of electrodes. The first regions are of the first conductivity type and are formed in the second well. The second region is of the second conductivity type and is formed in the first well. Each of the electrodes is formed upon the second well and between adjacent two first regions of the first regions.
Claims24
A semiconductor device, comprising:
- a first well of a first conductivity type and a second well of a second conductivity type;
- a plurality of first regions of the first conductivity type formed in the second well;
- a second region of the second conductivity type formed in the first well;
- and
- a plurality of electrodes, each of the electrodes formed upon the second well and between adjacent two first regions of the first regions.
A circuit comprising:
- a silicon controlled rectifier (SCR) comprising a first diode and a second diode, each of the first and second diodes having a P type region and an N type region;
- and
- a MOS circuit comprising MOS transistors cascade-connected between the N type regions of the first and second diodes or between the P type regions of the first and second diodes.
A method, comprising:
- receiving a voltage surge to conduct a current path;
- and
- triggering a silicon controlled rectifier (SCR) to discharge the voltage surge;
- wherein the current path has a MOS circuit and one of a first diode and a second diode in the SCR,
- each of the first and second diodes has a P type region and an N type region, and the MOS circuit comprises MOS transistors cascade-connected between the N type regions of the first and second diodes or between the P type regions of the first and second diodes.
Dependencies are inferred from the claim text.