Semiconductor Device and Method of Forming Overlapping Semiconductor Die with Coplanar Vertical Interconnect Structure

A method of making a semiconductor device, comprising:

• providing first and second semiconductor die;
• forming a first interconnect structure over the first semiconductor die;
• forming a second interconnect structure over the first semiconductor die including a height greater than a height of the first interconnect structure;
• and
• disposing the second semiconductor die over the first interconnect structure.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die;
• forming first and second interconnect structures over the first semiconductor die;
• disposing a second semiconductor die over the first interconnect structure;
• and
• planarizing the second interconnect structure with a backside of the second semiconductor die.

A semiconductor device, comprising:

• a first semiconductor die;
• a second semiconductor die overlapping the first semiconductor die;
• a first interconnect structure disposed between the first semiconductor die and the second semiconductor die;
• and
• a second interconnect structure disposed over the first semiconductor die including a surface substantially coplanar with a surface of the second semiconductor die.