Integrated circuit device having through-silicon-via structure and method of manufacturing the integrated circuit device
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-hwa PARK, Kwang-jin MOON, Byung-lyul PARK, Suk-chul BANG
Life of this patent
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Abstract
Provided is an integrated circuit device including a through-silicon-via (TSV) structure and a method of manufacturing the integrated circuit device. The integrated circuit device includes a semiconductor structure including a substrate and an interlayer insulating film, a TSV structure passing through the substrate and the interlayer insulating film, a via insulating film substantially surrounding the TSV structure, and an insulating spacer disposed between the interlayer insulating film and the via insulating film.
Claims22
An integrated circuit device comprising:
- a semiconductor structure comprising a substrate and an interlayer insulating film;
- a through-silicon-via (TSV) structure passing through the substrate and the interlayer insulating film;
- a via insulating film passing through the substrate and the interlayer insulating film and substantially surrounding the TSV structure;
- and
- an insulating spacer disposed between the interlayer insulating film and the via insulating film.
An integrated circuit device comprising:
- a semiconductor structure comprising a semiconductor substrate and an interlayer insulating film;
- a through-silicon-via (TSV) structure formed in a via hole passing through the semiconductor substrate and the interlayer insulating film;
- a via insulating film disposed in the via hole and substantially surrounding the TSV structure;
- and
- an insulating spacer disposed between the interlayer insulating film and the via insulating film, the insulating spacer substantially surrounding the TSV structure.
16-25. (canceled)
A device comprising:
- a semiconductor substrate;
- an insulating film formed on the semiconductor substrate;
- a via hole extending through the semiconductor substrate and the insulating film;
- a contact plug extending through the via hole;
- a via hole insulating layer substantially surrounding the contact plug;
- and
- an insulating spacer between the via hole insulating layer and the insulating film, the insulating spacer extending along only a portion of a sidewall of the via hole.
31-34. (canceled)
Dependencies are inferred from the claim text.