Integrated circuits having device contacts and methods for fabricating the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsWei SHAO, Fan ZHANG, Vish SRINIVASAN
Life of this patent
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Abstract
Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a conductive plug that at least partially fills a contact seam void. The contact seam void is formed in a contact that extends through an ILD layer of dielectric material overlying a device region. A metallization layer is deposited overlying the contact.
Claims20
A method for fabricating an integrated circuit having a device contact, the method comprising:
- forming a conductive plug that at least partially fills a contact seam void formed in a contact that extends through an ILD layer of dielectric material overlying a device region;
- and
- depositing a metallization layer overlying the contact.
A method for fabricating an integrated circuit having a device contact, the method comprising:
- filling a contact opening with conductive material to form a contact, wherein the contact opening is formed in a first ILD layer of dielectric material that overlies a device region;
- planarizing the conductive material to expose a contact seam void formed in the contact;
- depositing Ti and/or TiN to at least partially fill the contact seam void and define a conductive plug;
- depositing a second ILD layer of dielectric material overlying the first ILD layer and the contact;
- etching the second ILD layer to form a sidewall that defines a metallization trench to expose the contact;
- forming a liner in the metallization trench overlying the sidewall and the contact;
- and
- plating a metallization layer in the metallization trench overlying the liner.
An integrated circuit having a device contact, the integrated circuit comprising:
- a device region;
- an ILD layer of dielectric material overlying the device region;
- a contact extending through the ILD layer to the device region, wherein the contact has a contact seam void formed therein;
- and
- a conductive plug that at least partially fills the contact seam void.
Dependencies are inferred from the claim text.