Semiconductor devices

A semiconductor device, comprising:

• a first semiconductor chip having at least one electrically conductive contact at a first side of the first semiconductor chip;
• an extension layer extending laterally from one or more sides of the first semiconductor chip;
• a redistribution layer disposed on a surface of the extension layer and the first side of the first semiconductor chip, the redistribution layer electrically coupling the at least one electrically conductive contact of the first semiconductor chip to at least one electrical connector;
• and
• an interposer electrically coupled to the at least one electrical connector and having a plurality of electrically conductive contacts at a surface of the interposer facing away from the redistribution layer;
• and
• a ball grid array disposed on the plurality of electrically conductive contacts of the interposer.

A method for manufacturing a semiconductor device, the method comprising:

• forming a redistribution layer on a surface of a layer that comprises a first semiconductor chip and an extension layer, wherein the redistribution layer extends beyond a boundary of the first semiconductor chip;
• forming a plurality of electrical connectors on the redistribution layer, wherein a first electrical connector of the plurality of the electrical connectors is disposed within the boundary of the first semiconductor chip and a second electrical connector of the plurality of electrical connectors is disposed outside of the boundary of the first semiconductor chip;
• connecting an interposer to the plurality of electrical connectors;
• and
• forming a ball grid array on a surface of the interposer that is opposite the plurality of electrical connectors.