US 2015/0028458 A1Published application

Semiconductor device and method of fabricating the same

AssigneeSamsung Electronics Co., Ltd.

InventorsDong-soo Lee, Eui-chul Hwang, Seong-ho Cho, Myoung-jae Lee, Sang-moon Lee, Sung-hun Lee, Rakib Uddin Mohammad, David Seo, Moon-seung Yang, Ji-hyun Hur

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Abstract

A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Claims20

Dependent claims

A semiconductor device comprising:

a compound semiconductor layer;
a dielectric layer;
and
a diffusion barrier layer comprising an oxynitride layer formed between the compound semiconductor layer and the dielectric layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 14/211,789Filed 14 Mar 2014
Priority: KR 10-2013-008983229 Jul 2013
Published: 29 Jan 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10P 14/6548
Of treatments performed after formation of the materials: by forming intermediate materials, e.g. capping layers or diffusion barriers
H10D 30/021
Manufacture or treatment: of FETs having insulated gates [IGFET]
H10D 62/85
Characterised by the materials: being Group III-V materials, e.g. GaAs
H10D 64/01358
Of electrodes having a conductor capacitively coupled to a semiconductor by an insulator: the insulator being formed after the semiconductor body,…