Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor device

Abstract

The present invention includes: a silicon-based substrate; and an epitaxial growth layer that has a configuration in which first and second nitride semiconductor layers having different lattice constants and thermal expansion coefficients are alternately laminated, and is arranged on the silicon-based substrate so that a film thickness thereof is gradually reduced at an outer edge portion. As a result, there are provided an epitaxial substrate and a semiconductor device in which generation of cracks at the outer edge portion is suppressed, and a method for manufacturing the semiconductor device.

Dependencies are inferred from the claim text.