Back to results
US 2015/0028453 A1Published application
Semiconductor device and method for forming the same
AssigneeSK hynix Inc.
InventorJae Bum KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor device in which a gettering layer is formed in a semiconductor substrate, and a method for forming the same are disclosed, resulting in increased reliability of the semiconductor substrate including the gettering layer. The semiconductor device includes a semiconductor substrate; a gettering layer formed of a first-type impurity and a second-type impurity in the semiconductor substrate so as to perform gettering of metal ion; and a deep-well region formed over the gettering layer in the semiconductor substrate.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- a gettering layer including a first-type impurity and a second-type impurity in the semiconductor substrate and configured to getter metal impurities;
- and
- a deep-well region formed over the gettering layer and provided in the semiconductor substrate.
1 more element
A semiconductor device comprising:
- a first well provided at a first level;
- and
- a gettering layer provided at a second level and including a first doping layer and a second doping layer, wherein the second doping layer comprises a polarity opposite to a polarity of the first doping layer, the second level being deeper than the first level,
- wherein the first doping layer and the second doping layer overlap at least partially.
1 more element
Dependencies are inferred from the claim text.