Semiconductor device and method of designing the same
AssigneeFujitsu Semiconductor Limited
InventorKENJI WATANABE
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate having a memory cell array region and a peripheral circuit region; a ferroelectric capacitor formed over the semiconductor substrate in the memory cell array region; and a dummy capacitor formed over the semiconductor substrate in the peripheral circuit region, with a layered structure same as that of the ferroelectric capacitor, with an area larger than that of the ferroelectric capacitor, and with a line width not larger than the width of the ferroelectric capacitor.
Claims12
A semiconductor device comprising:
- a semiconductor substrate that includes a memory cell array region and a peripheral circuit region;
- a ferroelectric capacitor formed over the semiconductor substrate in the memory cell array region, with a first area and a first width;
- and
- a dummy capacitor formed over the semiconductor substrate in the peripheral circuit region, with a layered structure same as a layer structure of the ferroelectric capacitor, with a second area larger than the first area, and with a second width not larger than the first width.
A semiconductor device comprising:
- a semiconductor substrate that includes a memory cell array region and a peripheral circuit region;
- an insulating film formed over the semiconductor substrate;
- a ferroelectric capacitor formed over the insulating film in the memory cell array region;
- a dummy plug formed in the insulating film in the peripheral circuit region;
- and
- a dummy capacitor, that is connected to the dummy plug, formed over the insulating film in the memory cell array region.
A method or designing a semiconductor device that includes a ferroelectric capacitor formed in a memory cell array region, and a dummy capacitor formed in a peripheral circuit region, with a layered structure same as a layered structure of the ferroelectric capacitor, the method comprising:
- patterning the dummy capacitor, that has a line width equal to a width of the ferroelectric capacitor, and that has an area larger than an area of the ferroelectric capacitor.
Dependencies are inferred from the claim text.